SIB412DK-T1-E3 - MOSFET N-CH 20V 9A SC75-6

Framleiðanda Part Number

SIB412DK-T1-E3

Innri Part Number

AX-SIB412DK-T1-E3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 20V 9A SC75-6

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

4656 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SIB412DK-T1-E3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir SIB412DK-T1-E3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIB412DK-T1-E3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 20V 9A SC75-6

Series : TrenchFET®

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 9A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 34 mOhm @ 6.6A, 4.5V

Vgs (th) (Max) @ kt : 1V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 10.16nC @ 5V

Vgs (hámark) : ±8V

Inntaksrýmd (Ciss) (Max) @ Vds : 535pF @ 10V

FET lögun : -

Dreifing orku (Max) : 2.4W (Ta), 13W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® SC-75-6L Single

Pakki / mál : PowerPAK® SC-75-6L

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SIB4 , SIB412D

skjöl fyrir SIB412DK-T1-E3

datasheets : SIB412DK-T1-E3.pdf

Tengdar vörur fyrir SIB412DK-T1-E3 Vishay Siliconix

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