SI7792DP-T1-GE3 - MOSFET N-CH 30V P-PACK SO-8

Framleiðanda Part Number

SI7792DP-T1-GE3

Innri Part Number

AX-SI7792DP-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 30V P-PACK SO-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

67675 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI7792DP-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI7792DP-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 30V P-PACK SO-8

Series : SkyFET®, TrenchFET® Gen III

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 30V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 40.6A (Ta), 60A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 20A, 10V

Vgs (th) (Max) @ kt : 2.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 135nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 4.735nF @ 15V

FET lögun : Schottky Diode (Body)

Dreifing orku (Max) : 6.25W (Ta), 104W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® SO-8

Pakki / mál : PowerPAK® SO-8

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI779 , SI7792D

skjöl fyrir SI7792DP-T1-GE3

datasheets : SI7792DP-T1-GE3.pdf

Tengdar vörur fyrir SI7792DP-T1-GE3 Vishay Siliconix

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