FDD10N20LZTM - MOSFET N-CH 200V 7.6A DPAK-3

Framleiðanda Part Number

FDD10N20LZTM

Innri Part Number

AX-FDD10N20LZTM

framleiðanda

ON Semiconductor

Stutt lýsing

MOSFET N-CH 200V 7.6A DPAK-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1286360 Pieces

Tilvísun verð

~~USD 0.218106~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með FDD10N20LZTM á lager að selja.

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forskriftir fyrir FDD10N20LZTM

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : FDD10N20LZTM

framleiðanda : ON Semiconductor

Lýsing : MOSFET N-CH 200V 7.6A DPAK-3

Series : UniFET™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 200V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 7.6A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 360 mOhm @ 3.8A, 10V

Vgs (th) (Max) @ kt : 2.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 585pF @ 25V

FET lögun : -

Dreifing orku (Max) : 83W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : DPAK

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : FDD1 , FDD10N

skjöl fyrir FDD10N20LZTM

datasheets : FDD10N20LZTM.pdf

Tengdar vörur fyrir FDD10N20LZTM ON Semiconductor

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