IPD09N03LB G - MOSFET N-CH 30V 50A DPAK

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 30V 50A DPAK
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
65490 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir IPD09N03LB G

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : IPD09N03LB G
framleiðanda : Infineon Technologies
Lýsing : MOSFET N-CH 30V 50A DPAK
Series : OptiMOS™
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 50A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt : 2V @ 20µA
Hliðargjald (Qg) (Max) @ Vgs : 13nC @ 5V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1600pF @ 15V
FET lögun : -
Dreifing orku (Max) : 58W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63
þyngd : -
ástand : Nýtt og frumlegt
Tengt : IPD0 , IPD09N

skjöl fyrir IPD09N03LB G

datasheets : IPD09N03LB G.pdf

Tengdar vörur fyrir IPD09N03LB G Infineon Technologies

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