IPT111N20NFDATMA1 - MOSFET N-CH 200V 96A HSOF-8

Framleiðanda Part Number

IPT111N20NFDATMA1

Innri Part Number

AX-IPT111N20NFDATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 200V 96A HSOF-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

112030 Pieces

Tilvísun verð

~~USD 2.504244~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPT111N20NFDATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir IPT111N20NFDATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPT111N20NFDATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 200V 96A HSOF-8

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 200V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 96A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 11.1 mOhm @ 96A, 10V

Vgs (th) (Max) @ kt : 4V @ 267µA

Hliðargjald (Qg) (Max) @ Vgs : 87nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 7000pF @ 100V

FET lögun : -

Dreifing orku (Max) : 375W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-HSOF-8-1

Pakki / mál : 8-PowerSFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPT11 , IPT111N2

skjöl fyrir IPT111N20NFDATMA1

datasheets : IPT111N20NFDATMA1.pdf

Tengdar vörur fyrir IPT111N20NFDATMA1 Infineon Technologies

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