IPB097N08N3 G - MOSFET N-CH 80V 70A TO263-3

Framleiðanda Part Number

IPB097N08N3 G

Innri Part Number

AX-IPB097N08N3 G

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 80V 70A TO263-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

15688 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPB097N08N3 G á lager að selja.

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forskriftir fyrir IPB097N08N3 G

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPB097N08N3 G

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 80V 70A TO263-3

Series : OptiMOS™

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 80V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 70A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 9.7 mOhm @ 46A, 10V

Vgs (th) (Max) @ kt : 3.5V @ 46µA

Hliðargjald (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 2410pF @ 40V

FET lögun : -

Dreifing orku (Max) : 100W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : D²PAK (TO-263AB)

Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPB0 , IPB097

skjöl fyrir IPB097N08N3 G

datasheets : IPB097N08N3 G.pdf

Tengdar vörur fyrir IPB097N08N3 G Infineon Technologies

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