SI3458BDV-T1-GE3 - MOSFET N-CH 60V 4.1A 6-TSOP

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 60V 4.1A 6-TSOP
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
1199450 Pieces
Tilvísun verð
USD 0.23391
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI3458BDV-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI3458BDV-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 60V 4.1A 6-TSOP
Series : TrenchFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 4.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ kt : 3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 350pF @ 30V
FET lögun : -
Dreifing orku (Max) : 2W (Ta), 3.3W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 6-TSOP
Pakki / mál : SOT-23-6 Thin, TSOT-23-6
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI345 , SI3458BD

skjöl fyrir SI3458BDV-T1-GE3

datasheets : SI3458BDV-T1-GE3.pdf

Tengdar vörur fyrir SI3458BDV-T1-GE3 Vishay Siliconix

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