SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650

Framleiðanda Part Number

SCTW90N65G2V

Innri Part Number

AX-SCTW90N65G2V

framleiðanda

STMicroelectronics

Stutt lýsing

SILICON CARBIDE POWER MOSFET 650

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

12424 Pieces

Tilvísun verð

~~USD 36.09~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SCTW90N65G2V á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir SCTW90N65G2V

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SCTW90N65G2V

framleiðanda : STMicroelectronics

Lýsing : SILICON CARBIDE POWER MOSFET 650

Series : -

Hluti staða : Active

FET gerð : N-Channel

Tækni : SiCFET (Silicon Carbide)

Afrennsli að uppspennu (Vdss) : 650V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 90A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A, 18V

Vgs (th) (Max) @ kt : 5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (hámark) : +22V, -10V

Inntaksrýmd (Ciss) (Max) @ Vds : 3300pF @ 400V

FET lögun : -

Dreifing orku (Max) : 390W (Tc)

Vinnuhitastig : -55°C ~ 200°C (TJ)

Festingargerð : Through Hole

Birgir tæki pakki : HiP247™

Pakki / mál : TO-247-3

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SCTW , SCTW90

skjöl fyrir SCTW90N65G2V

datasheets : SCTW90N65G2V.pdf

Tengdar vörur fyrir SCTW90N65G2V STMicroelectronics

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