RQ3E100GNTB - MOSFET N-CH 30V 10A 8-HSMT

Framleiðanda Part Number

RQ3E100GNTB

Innri Part Number

AX-RQ3E100GNTB

framleiðanda

Rohm Semiconductor

Stutt lýsing

MOSFET N-CH 30V 10A 8-HSMT

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

3373785 Pieces

Tilvísun verð

~~USD 0.08316~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir RQ3E100GNTB

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : RQ3E100GNTB

framleiðanda : Rohm Semiconductor

Lýsing : MOSFET N-CH 30V 10A 8-HSMT

Series : -

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 30V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 10A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 11.7 mOhm @ 10A, 10V

Vgs (th) (Max) @ kt : 2.5V @ 1mA

Hliðargjald (Qg) (Max) @ Vgs : 7.9nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 420pF @ 15V

FET lögun : -

Dreifing orku (Max) : 2W (Ta), 15W (Tc)

Vinnuhitastig : 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : 8-HSMT (3.2x3)

Pakki / mál : 8-PowerVDFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : RQ3 , RQ3E1

skjöl fyrir RQ3E100GNTB

datasheets : RQ3E100GNTB.pdf

Tengdar vörur fyrir RQ3E100GNTB Rohm Semiconductor

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