BSZ12DN20NS3GATMA1 - MOSFET N-CH 200V 11.3A 8TSDSON

Framleiðanda Part Number

BSZ12DN20NS3GATMA1

Innri Part Number

AX-BSZ12DN20NS3GATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 200V 11.3A 8TSDSON

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

895295 Pieces

Tilvísun verð

~~USD 0.313374~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með BSZ12DN20NS3GATMA1 á lager að selja.

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forskriftir fyrir BSZ12DN20NS3GATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSZ12DN20NS3GATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 200V 11.3A 8TSDSON

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 200V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 11.3A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 5.7A, 10V

Vgs (th) (Max) @ kt : 4V @ 25µA

Hliðargjald (Qg) (Max) @ Vgs : 8.7nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 680pF @ 100V

FET lögun : -

Dreifing orku (Max) : 50W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TSDSON-8

Pakki / mál : 8-PowerTDFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : BSZ12D , BSZ12DN20

skjöl fyrir BSZ12DN20NS3GATMA1

datasheets : BSZ12DN20NS3GATMA1.pdf

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