SIA456DJ-T1-GE3 - MOSFET N-CH 200V 2.6A SC70-6

Framleiðanda Part Number

SIA456DJ-T1-GE3

Innri Part Number

AX-SIA456DJ-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 200V 2.6A SC70-6

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1124590 Pieces

Tilvísun verð

~~USD 0.24948~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SIA456DJ-T1-GE3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir SIA456DJ-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIA456DJ-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 200V 2.6A SC70-6

Series : TrenchFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 200V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2.6A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 1.38 Ohm @ 750mA, 4.5V

Vgs (th) (Max) @ kt : 1.4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 14.5nC @ 10V

Vgs (hámark) : ±16V

Inntaksrýmd (Ciss) (Max) @ Vds : 350pF @ 100V

FET lögun : -

Dreifing orku (Max) : 3.5W (Ta), 19W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® SC-70-6 Single

Pakki / mál : PowerPAK® SC-70-6

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SIA45 , SIA456D

skjöl fyrir SIA456DJ-T1-GE3

datasheets : SIA456DJ-T1-GE3.pdf

Tengdar vörur fyrir SIA456DJ-T1-GE3 Vishay Siliconix

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