SQJ570EP-T1_GE3 - MOSFET N/P-CH 100V POWERPAK SO8

Framleiðanda Part Number

SQJ570EP-T1_GE3

Innri Part Number

AX-SQJ570EP-T1_GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N/P-CH 100V POWERPAK SO8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

891010 Pieces

Tilvísun verð

~~USD 0.31488~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SQJ570EP-T1_GE3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir SQJ570EP-T1_GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SQJ570EP-T1_GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N/P-CH 100V POWERPAK SO8

Series : Automotive, AEC-Q101, TrenchFET®

Hluti staða : Active

FET gerð : N and P-Channel

FET lögun : Standard

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 15A (Tc), 9.5A (Tc)

Rds On (Max) @ Id, Vgs : 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V

Vgs (th) (Max) @ kt : 2.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 20nC @ 10V, 15nC @ 10V

Inntaksrýmd (Ciss) (Max) @ Vds : 650pF @ 25V, 600pF @ 25V

Afl - Max : 27W

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Pakki / mál : PowerPAK® SO-8 Dual

Birgir tæki pakki : PowerPAK® SO-8 Dual

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SQJ57 , SQJ570E

skjöl fyrir SQJ570EP-T1_GE3

datasheets : SQJ570EP-T1_GE3.pdf

Tengdar vörur fyrir SQJ570EP-T1_GE3 Vishay Siliconix

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