SI6463BDQ-T1-GE3 - MOSFET P-CH 20V 6.2A 8-TSSOP

Framleiðanda Part Number

SI6463BDQ-T1-GE3

Innri Part Number

AX-SI6463BDQ-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET P-CH 20V 6.2A 8-TSSOP

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

7016 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI6463BDQ-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI6463BDQ-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET P-CH 20V 6.2A 8-TSSOP

Series : TrenchFET®

Hluti staða : Obsolete

FET gerð : P-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 6.2A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 15 mOhm @ 7.4A, 4.5V

Vgs (th) (Max) @ kt : 800mV @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 60nC @ 5V

Vgs (hámark) : ±8V

Inntaksrýmd (Ciss) (Max) @ Vds : -

FET lögun : -

Dreifing orku (Max) : 1.05W (Ta)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : 8-TSSOP

Pakki / mál : 8-TSSOP (0.173", 4.40mm Width)

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI646 , SI6463BD

skjöl fyrir SI6463BDQ-T1-GE3

datasheets : SI6463BDQ-T1-GE3.pdf

Tengdar vörur fyrir SI6463BDQ-T1-GE3 Vishay Siliconix

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