IRF7807VD1PBF - MOSFET N-CH 30V 8.3A 8-SOIC

Framleiðanda Part Number

IRF7807VD1PBF

Innri Part Number

AX-IRF7807VD1PBF

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 30V 8.3A 8-SOIC

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

68830 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IRF7807VD1PBF á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir IRF7807VD1PBF

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IRF7807VD1PBF

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 30V 8.3A 8-SOIC

Series : FETKY™

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 30V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 8.3A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 4.5V

Rds On (Max) @ Id, Vgs : 25 mOhm @ 7A, 4.5V

Vgs (th) (Max) @ kt : 3V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 14nC @ 4.5V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : -

FET lögun : Schottky Diode (Isolated)

Dreifing orku (Max) : 2.5W (Ta)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : 8-SO

Pakki / mál : 8-SOIC (0.154", 3.90mm Width)

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IRF7 , IRF780

skjöl fyrir IRF7807VD1PBF

datasheets : IRF7807VD1PBF.pdf

Tengdar vörur fyrir IRF7807VD1PBF Infineon Technologies

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