SI3812DV-T1-GE3 - MOSFET N-CH 20V 2A 6-TSOP

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 20V 2A 6-TSOP
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
11344 Pieces
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forskriftir fyrir SI3812DV-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI3812DV-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 20V 2A 6-TSOP
Series : LITTLE FOOT®
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ kt : 600mV @ 250µA (Min)
Hliðargjald (Qg) (Max) @ Vgs : 4nC @ 4.5V
Vgs (hámark) : ±12V
Inntaksrýmd (Ciss) (Max) @ Vds : -
FET lögun : Schottky Diode (Isolated)
Dreifing orku (Max) : 830mW (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 6-TSOP
Pakki / mál : SOT-23-6 Thin, TSOT-23-6
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI381 , SI3812D

skjöl fyrir SI3812DV-T1-GE3

datasheets : SI3812DV-T1-GE3.pdf

Tengdar vörur fyrir SI3812DV-T1-GE3 Vishay Siliconix

Part Number Merki Lýsing Kaupa

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EPCOS (TDK)

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