SI2367DS-T1-GE3 - MOSFET P-CH 20V 3.8A SOT-23

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET P-CH 20V 3.8A SOT-23
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
2878465 Pieces
Tilvísun verð
USD 0.09747
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI2367DS-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI2367DS-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET P-CH 20V 3.8A SOT-23
Series : TrenchFET®
Hluti staða : Active
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 66 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ kt : 1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 23nC @ 8V
Vgs (hámark) : ±8V
Inntaksrýmd (Ciss) (Max) @ Vds : 561pF @ 10V
FET lögun : -
Dreifing orku (Max) : 960mW (Ta), 1.7W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : SOT-23-3 (TO-236)
Pakki / mál : TO-236-3, SC-59, SOT-23-3
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI236 , SI2367D

skjöl fyrir SI2367DS-T1-GE3

datasheets : SI2367DS-T1-GE3.pdf

Tengdar vörur fyrir SI2367DS-T1-GE3 Vishay Siliconix

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