SISS70DN-T1-GE3 - MOSFET N-CH 125V

Framleiðanda Part Number

SISS70DN-T1-GE3

Innri Part Number

AX-SISS70DN-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 125V

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

728285 Pieces

Tilvísun verð

~~USD 0.385236~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SISS70DN-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SISS70DN-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 125V

Series : TrenchFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 125V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 8.5A (Ta), 31A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 29.8 mOhm @ 8.5A, 10V

Vgs (th) (Max) @ kt : 4.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 15.3nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 535pF @ 62.5V

FET lögun : -

Dreifing orku (Max) : 5.1W (Ta), 65.8W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® 1212-8S

Pakki / mál : PowerPAK® 1212-8S

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SISS7 , SISS70D

skjöl fyrir SISS70DN-T1-GE3

datasheets : SISS70DN-T1-GE3.pdf

Tengdar vörur fyrir SISS70DN-T1-GE3 Vishay Siliconix

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