SIHD6N65ET5-GE3 - MOSFET N-CH 650V 7A TO252AA

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 650V 7A TO252AA
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
605550 Pieces
Tilvísun verð
USD 0.46332
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SIHD6N65ET5-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SIHD6N65ET5-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 650V 7A TO252AA
Series : E
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 7A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 3A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 820pF @ 100V
FET lögun : -
Dreifing orku (Max) : 78W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : TO-252AA
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SIHD6 , SIHD6N6

skjöl fyrir SIHD6N65ET5-GE3

datasheets : SIHD6N65ET5-GE3.pdf

Tengdar vörur fyrir SIHD6N65ET5-GE3 Vishay Siliconix

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