SI2327DS-T1-GE3 - MOSFET P-CH 200V 0.38A SOT-23

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET P-CH 200V 0.38A SOT-23
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
10640 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI2327DS-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI2327DS-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET P-CH 200V 0.38A SOT-23
Series : TrenchFET®
Hluti staða : Obsolete
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 380mA (Ta)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.35 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt : 4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 510pF @ 25V
FET lögun : -
Dreifing orku (Max) : 750mW (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : SOT-23-3 (TO-236)
Pakki / mál : TO-236-3, SC-59, SOT-23-3
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI232 , SI2327D

skjöl fyrir SI2327DS-T1-GE3

datasheets : SI2327DS-T1-GE3.pdf

Tengdar vörur fyrir SI2327DS-T1-GE3 Vishay Siliconix

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