IPD082N10N3GATMA1 - MOSFET N-CH 100V 80A TO252-3

Framleiðanda Part Number

IPD082N10N3GATMA1

Innri Part Number

AX-IPD082N10N3GATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 100V 80A TO252-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

610245 Pieces

Tilvísun verð

~~USD 0.459756~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPD082N10N3GATMA1 á lager að selja.

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forskriftir fyrir IPD082N10N3GATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPD082N10N3GATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 100V 80A TO252-3

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 73A, 10V

Vgs (th) (Max) @ kt : 3.5V @ 75µA

Hliðargjald (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 3980pF @ 50V

FET lögun : -

Dreifing orku (Max) : 125W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO252-3

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPD08 , IPD082N1

skjöl fyrir IPD082N10N3GATMA1

datasheets : IPD082N10N3GATMA1.pdf

Tengdar vörur fyrir IPD082N10N3GATMA1 Infineon Technologies

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