SI7170DP-T1-GE3 - MOSFET N-CH 30V 40A PPAK SO-8

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 30V 40A PPAK SO-8
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forskriftir fyrir SI7170DP-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI7170DP-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 30V 40A PPAK SO-8
Series : TrenchFET®
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 40A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.4 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt : 2.6V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 4355pF @ 15V
FET lögun : -
Dreifing orku (Max) : 5W (Ta), 48W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® SO-8
Pakki / mál : PowerPAK® SO-8
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI717 , SI7170D

skjöl fyrir SI7170DP-T1-GE3

datasheets : SI7170DP-T1-GE3.pdf

Tengdar vörur fyrir SI7170DP-T1-GE3 Vishay Siliconix

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