IPD053N06N3GBTMA1 - MOSFET N-CH 60V 90A TO252-3

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 60V 90A TO252-3
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
15728 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir IPD053N06N3GBTMA1

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : IPD053N06N3GBTMA1
framleiðanda : Infineon Technologies
Lýsing : MOSFET N-CH 60V 90A TO252-3
Series : OptiMOS™
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 90A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.3 mOhm @ 90A, 10V
Vgs (th) (Max) @ kt : 4V @ 58µA
Hliðargjald (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 6600pF @ 30V
FET lögun : -
Dreifing orku (Max) : 115W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63
þyngd : -
ástand : Nýtt og frumlegt
Tengt : IPD05 , IPD053N0

skjöl fyrir IPD053N06N3GBTMA1

datasheets : IPD053N06N3GBTMA1.pdf

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