BSZ086P03NS3EGATMA1 - MOSFET P-CH 30V 40A TSDSON-8

Framleiðanda Part Number

BSZ086P03NS3EGATMA1

Innri Part Number

AX-BSZ086P03NS3EGATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET P-CH 30V 40A TSDSON-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1399470 Pieces

Tilvísun verð

~~USD 0.200478~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með BSZ086P03NS3EGATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir BSZ086P03NS3EGATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSZ086P03NS3EGATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET P-CH 30V 40A TSDSON-8

Series : OptiMOS™

Hluti staða : Active

FET gerð : P-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 30V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 13.5A (Ta), 40A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8.6 mOhm @ 20A, 10V

Vgs (th) (Max) @ kt : 3.1V @ 105µA

Hliðargjald (Qg) (Max) @ Vgs : 57.5nC @ 10V

Vgs (hámark) : ±25V

Inntaksrýmd (Ciss) (Max) @ Vds : 4785pF @ 15V

FET lögun : -

Dreifing orku (Max) : 2.1W (Ta), 69W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TSDSON-8

Pakki / mál : 8-PowerTDFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : BSZ086 , BSZ086P03

skjöl fyrir BSZ086P03NS3EGATMA1

datasheets : BSZ086P03NS3EGATMA1.pdf

Tengdar vörur fyrir BSZ086P03NS3EGATMA1 Infineon Technologies

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