IAUS165N08S5N029ATMA1 - MOSFET N-CH 80V 660A PG-HSOG-8-1

Framleiðanda Part Number

IAUS165N08S5N029ATMA1

Innri Part Number

AX-IAUS165N08S5N029ATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 80V 660A PG-HSOG-8-1

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

213965 Pieces

Tilvísun verð

~~USD 1.311252~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir IAUS165N08S5N029ATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IAUS165N08S5N029ATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 80V 660A PG-HSOG-8-1

Series : Automotive, AEC-Q101, OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 80V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 165A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 2.9 mOhm @ 80A, 10V

Vgs (th) (Max) @ kt : 3.8V @ 108µA

Hliðargjald (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 6370pF @ 40V

FET lögun : -

Dreifing orku (Max) : 167W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-HSOG-8-1

Pakki / mál : 8-PowerSMD, Gull Wing

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IAUS165 , IAUS165N08

skjöl fyrir IAUS165N08S5N029ATMA1

datasheets : IAUS165N08S5N029ATMA1.pdf

Tengdar vörur fyrir IAUS165N08S5N029ATMA1 Infineon Technologies

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GRM1555C1E8R1CZ01D	Murata Electronics North America	CAP CER 8.1PF 25V NP0 0402.
WF125300BH10338BJ1	Vishay Beyschlag	CAP CER 10000PF 10KV SCREW.
CDR01BX102BKZSAT	Vishay Vitramon	CAP CER 1000PF 100V 10 BX 0805.
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WF135272WL60236BJ1	Vishay Beyschlag	CAP CER 6000PF 16KV SCREW.
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PEF220WP60236BK1	Vishay Beyschlag	CAP CER 6000PF 20KV R230 DISK.
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