IPD80R3K3P7ATMA1 - MOSFET N-CH 800V 1.9A TO252-3

Framleiðanda Part Number

IPD80R3K3P7ATMA1

Innri Part Number

AX-IPD80R3K3P7ATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 800V 1.9A TO252-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1286040 Pieces

Tilvísun verð

~~USD 0.21816~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPD80R3K3P7ATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir IPD80R3K3P7ATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPD80R3K3P7ATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 800V 1.9A TO252-3

Series : CoolMOS™ P7

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 800V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 1.9A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.3 Ohm @ 590mA, 10V

Vgs (th) (Max) @ kt : 3.5V @ 30µA

Hliðargjald (Qg) (Max) @ Vgs : 5.8nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 120pF @ 500V

FET lögun : -

Dreifing orku (Max) : 18W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO252-3

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPD80 , IPD80R3K

skjöl fyrir IPD80R3K3P7ATMA1

datasheets : IPD80R3K3P7ATMA1.pdf

Tengdar vörur fyrir IPD80R3K3P7ATMA1 Infineon Technologies

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