IPT020N10N3ATMA1 - MOSFET N-CH 100V 300A 8HSOF

Framleiðanda Part Number

IPT020N10N3ATMA1

Innri Part Number

AX-IPT020N10N3ATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 100V 300A 8HSOF

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

116920 Pieces

Tilvísun verð

~~USD 2.399484~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPT020N10N3ATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir IPT020N10N3ATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPT020N10N3ATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 100V 300A 8HSOF

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 300A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 2 mOhm @ 150A, 10V

Vgs (th) (Max) @ kt : 3.5V @ 272µA

Hliðargjald (Qg) (Max) @ Vgs : 156nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 11200pF @ 50V

FET lögun : -

Dreifing orku (Max) : 375W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-HSOF-8-1

Pakki / mál : 8-PowerSFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPT02 , IPT020N1

skjöl fyrir IPT020N10N3ATMA1

datasheets : IPT020N10N3ATMA1.pdf

Tengdar vörur fyrir IPT020N10N3ATMA1 Infineon Technologies

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