SI5855DC-T1-E3 - MOSFET P-CH 20V 2.7A 1206-8

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET P-CH 20V 2.7A 1206-8
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
4520 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SI5855DC-T1-E3 á lager að selja.
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forskriftir fyrir SI5855DC-T1-E3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI5855DC-T1-E3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET P-CH 20V 2.7A 1206-8
Series : TrenchFET®
Hluti staða : Obsolete
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2.7A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ kt : 1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 7.7nC @ 4.5V
Vgs (hámark) : ±8V
Inntaksrýmd (Ciss) (Max) @ Vds : -
FET lögun : Schottky Diode (Isolated)
Dreifing orku (Max) : 1.1W (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 1206-8 ChipFET™
Pakki / mál : 8-SMD, Flat Lead
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI58 , SI5855D

skjöl fyrir SI5855DC-T1-E3

datasheets : SI5855DC-T1-E3.pdf

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