IPD80R2K0P7ATMA1 - MOSFET N-CH 800V 3A TO252-3

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 800V 3A TO252-3
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
1205385 Pieces
Tilvísun verð
USD 0.232758
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPD80R2K0P7ATMA1 á lager að selja.
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forskriftir fyrir IPD80R2K0P7ATMA1

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : IPD80R2K0P7ATMA1
framleiðanda : Infineon Technologies
Lýsing : MOSFET N-CH 800V 3A TO252-3
Series : CoolMOS™ P7
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 940mA, 10V
Vgs (th) (Max) @ kt : 3.5V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 175pF @ 500V
FET lögun : -
Dreifing orku (Max) : 24W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63
þyngd : -
ástand : Nýtt og frumlegt
Tengt : IPD80 , IPD80R2K

skjöl fyrir IPD80R2K0P7ATMA1

datasheets : IPD80R2K0P7ATMA1.pdf

Tengdar vörur fyrir IPD80R2K0P7ATMA1 Infineon Technologies

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