FQD2N90TM - MOSFET N-CH 900V 1.7A DPAK

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 900V 1.7A DPAK
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
814510 Pieces
Tilvísun verð
USD 0.344454
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með FQD2N90TM á lager að selja.
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forskriftir fyrir FQD2N90TM

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : FQD2N90TM
framleiðanda : ON Semiconductor
Lýsing : MOSFET N-CH 900V 1.7A DPAK
Series : QFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 900V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 1.7A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.2 Ohm @ 850mA, 10V
Vgs (th) (Max) @ kt : 5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 500pF @ 25V
FET lögun : -
Dreifing orku (Max) : 2.5W (Ta), 50W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D-Pak
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63
þyngd : -
ástand : Nýtt og frumlegt
Tengt : FQD , FQD2

skjöl fyrir FQD2N90TM

datasheets : FQD2N90TM.pdf

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