EPC2010 - GANFET TRANS 200V 12A BUMPED DIE

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
GANFET TRANS 200V 12A BUMPED DIE
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
10080 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir EPC2010

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : EPC2010
framleiðanda : EPC
Lýsing : GANFET TRANS 200V 12A BUMPED DIE
Series : eGaN®
Hluti staða : Discontinued at Digi-Key
FET gerð : N-Channel
Tækni : GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) : 200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 12A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs (th) (Max) @ kt : 2.5V @ 3mA
Hliðargjald (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (hámark) : +6V, -4V
Inntaksrýmd (Ciss) (Max) @ Vds : 540pF @ 100V
FET lögun : -
Dreifing orku (Max) : -
Vinnuhitastig : -40°C ~ 125°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : Die
Pakki / mál : Die
þyngd : -
ástand : Nýtt og frumlegt
Tengt : EP , EPC

skjöl fyrir EPC2010

datasheets : EPC2010.pdf

Tengdar vörur fyrir EPC2010 EPC

Part Number Merki Lýsing Kaupa

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