EPC2010 - GANFET TRANS 200V 12A BUMPED DIE
Framleiðanda Part Number
Innri Part Number
AX-EPC2010
framleiðanda
Stutt lýsing
GANFET TRANS 200V 12A BUMPED DIE
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
10080 Pieces
Tilvísun verð
Okkar verð
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forskriftir fyrir EPC2010
gæði ábyrgð :
365 dagar ábyrgð
Stock Resource :
Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number :
EPC2010
framleiðanda :
EPC
Lýsing :
GANFET TRANS 200V 12A BUMPED DIE
Series :
eGaN®
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 6A, 5V
Vgs (th) (Max) @ kt :
2.5V @ 3mA
Hliðargjald (Qg) (Max) @ Vgs :
7.5nC @ 5V
Vgs (hámark) :
+6V, -4V
Inntaksrýmd (Ciss) (Max) @ Vds :
540pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
-
Vinnuhitastig :
-40°C ~ 125°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
Die
Pakki / mál :
Die
þyngd :
-
ástand :
Nýtt og frumlegt
skjöl fyrir EPC2010
datasheets :
EPC2010.pdf
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