BSC047N08NS3GATMA1 - MOSFET N-CH 80V 100A TDSON-8

Framleiðanda Part Number

BSC047N08NS3GATMA1

Innri Part Number

AX-BSC047N08NS3GATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 80V 100A TDSON-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

378685 Pieces

Tilvísun verð

~~USD 0.740886~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með BSC047N08NS3GATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir BSC047N08NS3GATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSC047N08NS3GATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 80V 100A TDSON-8

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 80V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 18A (Ta), 100A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 50A, 10V

Vgs (th) (Max) @ kt : 3.5V @ 90µA

Hliðargjald (Qg) (Max) @ Vgs : 69nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 4800pF @ 40V

FET lögun : -

Dreifing orku (Max) : 2.5W (Ta), 125W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TDSON-8

Pakki / mál : 8-PowerTDFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : BSC047 , BSC047N08

skjöl fyrir BSC047N08NS3GATMA1

datasheets : BSC047N08NS3GATMA1.pdf

Tengdar vörur fyrir BSC047N08NS3GATMA1 Infineon Technologies

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