IPB019N08N3GATMA1 - MOSFET N-CH 80V 180A TO263-7

Framleiðanda Part Number

IPB019N08N3GATMA1

Innri Part Number

AX-IPB019N08N3GATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 80V 180A TO263-7

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

141715 Pieces

Tilvísun verð

~~USD 1.97967~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPB019N08N3GATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir IPB019N08N3GATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPB019N08N3GATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 80V 180A TO263-7

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 80V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 180A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 1.9 mOhm @ 100A, 10V

Vgs (th) (Max) @ kt : 3.5V @ 270µA

Hliðargjald (Qg) (Max) @ Vgs : 206nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 14200pF @ 40V

FET lögun : -

Dreifing orku (Max) : 300W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO263-7

Pakki / mál : TO-263-7, D²Pak (6 Leads + Tab)

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPB01 , IPB019N0

skjöl fyrir IPB019N08N3GATMA1

datasheets : IPB019N08N3GATMA1.pdf

Tengdar vörur fyrir IPB019N08N3GATMA1 Infineon Technologies

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