SI4896DY-T1-GE3 - MOSFET N-CH 80V 6.7A 8SOIC

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 80V 6.7A 8SOIC
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
568545 Pieces
Tilvísun verð
USD 0.493476
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI4896DY-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI4896DY-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 80V 6.7A 8SOIC
Series : TrenchFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 6.7A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 16.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt : 2V @ 250µA (Min)
Hliðargjald (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : -
FET lögun : -
Dreifing orku (Max) : 1.56W (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 8-SO
Pakki / mál : 8-SOIC (0.154", 3.90mm Width)
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI489 , SI4896D

skjöl fyrir SI4896DY-T1-GE3

datasheets : SI4896DY-T1-GE3.pdf

Tengdar vörur fyrir SI4896DY-T1-GE3 Vishay Siliconix

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