SQJQ900E-T1_GE3 - MOSFET 2 N-CH 40V POWERPAK8X8

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET 2 N-CH 40V POWERPAK8X8
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
371880 Pieces
Tilvísun verð
USD 0.754428
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SQJQ900E-T1_GE3 á lager að selja.
Siglinga valkosti og skipum tími:
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FEDEX: 2-3 days.
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forskriftir fyrir SQJQ900E-T1_GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SQJQ900E-T1_GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET 2 N-CH 40V POWERPAK8X8
Series : Automotive, AEC-Q101, TrenchFET®
Hluti staða : Active
FET gerð : 2 N-Channel (Dual)
FET lögun : Standard
Afrennsli að uppspennu (Vdss) : 40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 100A (Tc)
Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt : 2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 120nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds : 5900pF @ 20V
Afl - Max : 75W
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Pakki / mál : PowerPAK® 8 x 8 Dual
Birgir tæki pakki : PowerPAK® 8 x 8 Dual
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SQJQ9 , SQJQ900

skjöl fyrir SQJQ900E-T1_GE3

datasheets : SQJQ900E-T1_GE3.pdf

Tengdar vörur fyrir SQJQ900E-T1_GE3 Vishay Siliconix

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