SIA850DJ-T1-GE3 - MOSFET N-CH 190V 0.95A SC70-6

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 190V 0.95A SC70-6
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
15832 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SIA850DJ-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SIA850DJ-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 190V 0.95A SC70-6
Series : LITTLE FOOT®
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 190V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 950mA (Tc)
Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 3.8 Ohm @ 360mA, 4.5V
Vgs (th) (Max) @ kt : 1.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 4.5nC @ 10V
Vgs (hámark) : ±16V
Inntaksrýmd (Ciss) (Max) @ Vds : 90pF @ 100V
FET lögun : Schottky Diode (Isolated)
Dreifing orku (Max) : 1.9W (Ta), 7W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® SC-70-6 Dual
Pakki / mál : PowerPAK® SC-70-6 Dual
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SIA85 , SIA850D

skjöl fyrir SIA850DJ-T1-GE3

datasheets : SIA850DJ-T1-GE3.pdf

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