SI7703EDN-T1-GE3 - MOSFET P-CH 20V 4.3A 1212-8 PPAK

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET P-CH 20V 4.3A 1212-8 PPAK
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
10720 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI7703EDN-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI7703EDN-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET P-CH 20V 4.3A 1212-8 PPAK
Series : TrenchFET®
Hluti staða : Obsolete
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 4.3A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 48 mOhm @ 6.3A, 4.5V
Vgs (th) (Max) @ kt : 1V @ 800µA
Hliðargjald (Qg) (Max) @ Vgs : 18nC @ 4.5V
Vgs (hámark) : ±12V
Inntaksrýmd (Ciss) (Max) @ Vds : -
FET lögun : Schottky Diode (Isolated)
Dreifing orku (Max) : 1.3W (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® 1212-8
Pakki / mál : PowerPAK® 1212-8
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI770 , SI7703ED

skjöl fyrir SI7703EDN-T1-GE3

datasheets : SI7703EDN-T1-GE3.pdf

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