BUK9E1R6-30E,127 - MOSFET N-CH 30V 120A I2PAK

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 30V 120A I2PAK
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
24745 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með BUK9E1R6-30E,127 á lager að selja.
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forskriftir fyrir BUK9E1R6-30E,127

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : BUK9E1R6-30E,127
framleiðanda : NXP USA Inc.
Lýsing : MOSFET N-CH 30V 120A I2PAK
Series : TrenchMOS™
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 120A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ kt : 2.1V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : 113nC @ 5V
Vgs (hámark) : ±10V
Inntaksrýmd (Ciss) (Max) @ Vds : 16150pF @ 25V
FET lögun : -
Dreifing orku (Max) : 349W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : I2PAK
Pakki / mál : TO-262-3 Long Leads, I²Pak, TO-262AA
þyngd : -
ástand : Nýtt og frumlegt
Tengt : BUK9E , BUK9E1R6

skjöl fyrir BUK9E1R6-30E,127

datasheets : BUK9E1R6-30E,127.pdf

Tengdar vörur fyrir BUK9E1R6-30E,127 NXP USA Inc.

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