IPDD60R102G7XTMA1 - MOSFET NCH 650V 66A PG-HDSOP-10

Framleiðanda Part Number

IPDD60R102G7XTMA1

Innri Part Number

AX-IPDD60R102G7XTMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET NCH 650V 66A PG-HDSOP-10

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

157865 Pieces

Tilvísun verð

~~USD 1.777128~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPDD60R102G7XTMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir IPDD60R102G7XTMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPDD60R102G7XTMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET NCH 650V 66A PG-HDSOP-10

Series : CoolMOS™ G7

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 600V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 23A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 102 mOhm @ 7.8A, 10V

Vgs (th) (Max) @ kt : 4V @ 390µA

Hliðargjald (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 1320pF @ 400V

FET lögun : -

Dreifing orku (Max) : 139W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-HDSOP-10-1

Pakki / mál : 10-PowerSOP Module

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPDD6 , IPDD60R1

skjöl fyrir IPDD60R102G7XTMA1

datasheets : IPDD60R102G7XTMA1.pdf

Tengdar vörur fyrir IPDD60R102G7XTMA1 Infineon Technologies

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