IRF6709S2TR1PBF - MOSFET N-CH 25V 12A DIRECTFET-S1

Framleiðanda Part Number

IRF6709S2TR1PBF

Innri Part Number

AX-IRF6709S2TR1PBF

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 25V 12A DIRECTFET-S1

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

10160 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IRF6709S2TR1PBF á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir IRF6709S2TR1PBF

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IRF6709S2TR1PBF

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 25V 12A DIRECTFET-S1

Series : HEXFET®

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 25V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 12A (Ta), 39A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7.8 mOhm @ 12A, 10V

Vgs (th) (Max) @ kt : 2.35V @ 25µA

Hliðargjald (Qg) (Max) @ Vgs : 12nC @ 4.5V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 1010pF @ 13V

FET lögun : -

Dreifing orku (Max) : 1.8W (Ta), 21W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : DIRECTFET S1

Pakki / mál : DirectFET™ Isometric S1

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IRF67 , IRF6709

skjöl fyrir IRF6709S2TR1PBF

datasheets : IRF6709S2TR1PBF.pdf

Tengdar vörur fyrir IRF6709S2TR1PBF Infineon Technologies

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