RCD100N19TL - MOSFET N-CH 190V 10A CPT3

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 190V 10A CPT3
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
1012130 Pieces
Tilvísun verð
USD 0.2772
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir RCD100N19TL

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : RCD100N19TL
framleiðanda : Rohm Semiconductor
Lýsing : MOSFET N-CH 190V 10A CPT3
Series : -
Hluti staða : Not For New Designs
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 190V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 10A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 182 mOhm @ 5A, 10V
Vgs (th) (Max) @ kt : 2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 2000pF @ 25V
FET lögun : -
Dreifing orku (Max) : 850mW (Ta), 20W (Tc)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : CPT3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63
þyngd : -
ástand : Nýtt og frumlegt
Tengt : RCD , RCD10

skjöl fyrir RCD100N19TL

datasheets : RCD100N19TL.pdf

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