IPD16CNE8N G - MOSFET N-CH 85V 53A TO252-3

Framleiðanda Part Number

IPD16CNE8N G

Innri Part Number

AX-IPD16CNE8N G

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 85V 53A TO252-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

8336 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPD16CNE8N G á lager að selja.

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forskriftir fyrir IPD16CNE8N G

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPD16CNE8N G

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 85V 53A TO252-3

Series : OptiMOS™

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 85V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 53A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 16 mOhm @ 53A, 10V

Vgs (th) (Max) @ kt : 4V @ 61µA

Hliðargjald (Qg) (Max) @ Vgs : 48nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 3230pF @ 40V

FET lögun : -

Dreifing orku (Max) : 100W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO252-3

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPD1 , IPD16C

skjöl fyrir IPD16CNE8N G

datasheets : IPD16CNE8N G.pdf

Tengdar vörur fyrir IPD16CNE8N G Infineon Technologies

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