SI3460DDV-T1-GE3 - MOSFET N-CH 20V 7.9A 6-TSOP

Framleiðanda Part Number

SI3460DDV-T1-GE3

Innri Part Number

AX-SI3460DDV-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 20V 7.9A 6-TSOP

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

2878465 Pieces

Tilvísun verð

~~USD 0.09747~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI3460DDV-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI3460DDV-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 20V 7.9A 6-TSOP

Series : TrenchFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 7.9A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 28 mOhm @ 5.1A, 4.5V

Vgs (th) (Max) @ kt : 1V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 18nC @ 8V

Vgs (hámark) : ±8V

Inntaksrýmd (Ciss) (Max) @ Vds : 666pF @ 10V

FET lögun : -

Dreifing orku (Max) : 1.7W (Ta), 2.7W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : 6-TSOP

Pakki / mál : SOT-23-6 Thin, TSOT-23-6

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI346 , SI3460DD

skjöl fyrir SI3460DDV-T1-GE3

datasheets : SI3460DDV-T1-GE3.pdf

Tengdar vörur fyrir SI3460DDV-T1-GE3 Vishay Siliconix

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GRM1555C1E8R1CZ01D	Murata Electronics North America	CAP CER 8.1PF 25V NP0 0402.
GRM0335C1H5R9DD01D	Murata Electronics North America	CAP CER 5.9PF 50V NP0 0201.
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GRM0225C1E5R6DDAEL	Murata Electronics North America	CAP CER 5.6PF 25V C0G/NP0 01005.
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