SIS888DN-T1-GE3 - MOSFET N-CH 150V 20.2A 1212-8S

Framleiðanda Part Number

SIS888DN-T1-GE3

Innri Part Number

AX-SIS888DN-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 150V 20.2A 1212-8S

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

603435 Pieces

Tilvísun verð

~~USD 0.46494~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SIS888DN-T1-GE3 á lager að selja.

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forskriftir fyrir SIS888DN-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIS888DN-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 150V 20.2A 1212-8S

Series : ThunderFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 150V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 20.2A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 7.5V, 10V

Rds On (Max) @ Id, Vgs : 58 mOhm @ 10A, 10V

Vgs (th) (Max) @ kt : 4.2V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 14.5nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 420pF @ 75V

FET lögun : -

Dreifing orku (Max) : 52W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TA)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® 1212-8S (3.3x3.3)

Pakki / mál : PowerPAK® 1212-8S

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SIS88 , SIS888D

skjöl fyrir SIS888DN-T1-GE3

datasheets : SIS888DN-T1-GE3.pdf

Tengdar vörur fyrir SIS888DN-T1-GE3 Vishay Siliconix

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