SI5509DC-T1-E3 - MOSFET N/P-CH 20V 6.1A 1206-8

Framleiðanda Part Number

SI5509DC-T1-E3

Innri Part Number

AX-SI5509DC-T1-E3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N/P-CH 20V 6.1A 1206-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

26873 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SI5509DC-T1-E3 á lager að selja.

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forskriftir fyrir SI5509DC-T1-E3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI5509DC-T1-E3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N/P-CH 20V 6.1A 1206-8

Series : TrenchFET®

Hluti staða : Obsolete

FET gerð : N and P-Channel

FET lögun : Logic Level Gate

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 6.1A, 4.8A

Rds On (Max) @ Id, Vgs : 52 mOhm @ 5A, 4.5V

Vgs (th) (Max) @ kt : 2V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 6.6nC @ 5V

Inntaksrýmd (Ciss) (Max) @ Vds : 455pF @ 10V

Afl - Max : 4.5W

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Pakki / mál : 8-SMD, Flat Lead

Birgir tæki pakki : 1206-8 ChipFET™

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI55 , SI5509D

skjöl fyrir SI5509DC-T1-E3

datasheets : SI5509DC-T1-E3.pdf

Tengdar vörur fyrir SI5509DC-T1-E3 Vishay Siliconix

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