IPB80N06S2L11ATMA1 - MOSFET N-CH 55V 80A TO263-3

Framleiðanda Part Number

IPB80N06S2L11ATMA1

Innri Part Number

AX-IPB80N06S2L11ATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 55V 80A TO263-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

8288 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPB80N06S2L11ATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir IPB80N06S2L11ATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPB80N06S2L11ATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 55V 80A TO263-3

Series : OptiMOS™

Hluti staða : Discontinued at Digi-Key

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 55V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10.7 mOhm @ 60A, 10V

Vgs (th) (Max) @ kt : 2V @ 93µA

Hliðargjald (Qg) (Max) @ Vgs : 80nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 2075pF @ 25V

FET lögun : -

Dreifing orku (Max) : 158W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO263-3-2

Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPB80N , IPB80N06S

skjöl fyrir IPB80N06S2L11ATMA1

datasheets : IPB80N06S2L11ATMA1.pdf

Tengdar vörur fyrir IPB80N06S2L11ATMA1 Infineon Technologies

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WI140316WQ75236BJ2	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
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