BSP149H6327XTSA1 - MOSFET N-CH 200V 660MA SOT-223

Framleiðanda Part Number

BSP149H6327XTSA1

Innri Part Number

AX-BSP149H6327XTSA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 200V 660MA SOT-223

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

744590 Pieces

Tilvísun verð

~~USD 0.3768~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með BSP149H6327XTSA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir BSP149H6327XTSA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSP149H6327XTSA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 200V 660MA SOT-223

Series : SIPMOS®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 200V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 660mA (Ta)

Drifspenna (Max Rds On, Min Rds On) : 0V, 10V

Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 660mA, 10V

Vgs (th) (Max) @ kt : 1V @ 400µA

Hliðargjald (Qg) (Max) @ Vgs : 14nC @ 5V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 430pF @ 25V

FET lögun : Depletion Mode

Dreifing orku (Max) : 1.8W (Ta)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-SOT223-4

Pakki / mál : TO-261-4, TO-261AA

þyngd : -

ástand : Nýtt og frumlegt

Tengt : BSP14 , BSP149H6

skjöl fyrir BSP149H6327XTSA1

datasheets : BSP149H6327XTSA1.pdf

Tengdar vörur fyrir BSP149H6327XTSA1 Infineon Technologies

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