GP1M009A090N - MOSFET N-CH 900V 9.5A TO3PN

Framleiðanda Part Number

GP1M009A090N

Innri Part Number

AX-GP1M009A090N

framleiðanda

Global Power Technologies Group

Stutt lýsing

MOSFET N-CH 900V 9.5A TO3PN

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

21136 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með GP1M009A090N á lager að selja.

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forskriftir fyrir GP1M009A090N

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : GP1M009A090N

framleiðanda : Global Power Technologies Group

Lýsing : MOSFET N-CH 900V 9.5A TO3PN

Series : -

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 900V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 9.5A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4.75A, 10V

Vgs (th) (Max) @ kt : 4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 65nC @ 10V

Vgs (hámark) : ±30V

Inntaksrýmd (Ciss) (Max) @ Vds : 2324pF @ 25V

FET lögun : -

Dreifing orku (Max) : 312W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Through Hole

Birgir tæki pakki : TO-3PN

Pakki / mál : TO-3P-3, SC-65-3

þyngd : -

ástand : Nýtt og frumlegt

Tengt : GP1M , GP1M00

skjöl fyrir GP1M009A090N

datasheets : GP1M009A090N.pdf

Tengdar vörur fyrir GP1M009A090N Global Power Technologies Group

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