IPB042N10N3GE8187ATMA1 - MOSFET N-CH 100V 100A TO263-3

Framleiðanda Part Number

IPB042N10N3GE8187ATMA1

Innri Part Number

AX-IPB042N10N3GE8187ATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 100V 100A TO263-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

309145 Pieces

Tilvísun verð

~~USD 0.907524~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPB042N10N3GE8187ATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir IPB042N10N3GE8187ATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPB042N10N3GE8187ATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 100V 100A TO263-3

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 100A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 50A, 10V

Vgs (th) (Max) @ kt : 3.5V @ 150µA

Hliðargjald (Qg) (Max) @ Vgs : 117nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 8410pF @ 50V

FET lögun : -

Dreifing orku (Max) : 214W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : D²PAK (TO-263AB)

Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPB042N , IPB042N10N3

skjöl fyrir IPB042N10N3GE8187ATMA1

datasheets : IPB042N10N3GE8187ATMA1.pdf

Tengdar vörur fyrir IPB042N10N3GE8187ATMA1 Infineon Technologies

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