BSB165N15NZ3GXUMA1 - MOSFET N-CH 150V 9A WDSON-2

Framleiðanda Part Number

BSB165N15NZ3GXUMA1

Innri Part Number

AX-BSB165N15NZ3GXUMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 150V 9A WDSON-2

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

274305 Pieces

Tilvísun verð

~~USD 1.022802~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með BSB165N15NZ3GXUMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir BSB165N15NZ3GXUMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSB165N15NZ3GXUMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 150V 9A WDSON-2

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 150V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 9A (Ta), 45A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 8V, 10V

Rds On (Max) @ Id, Vgs : 16.5 mOhm @ 30A, 10V

Vgs (th) (Max) @ kt : 4V @ 110µA

Hliðargjald (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 2800pF @ 75V

FET lögun : -

Dreifing orku (Max) : 2.8W (Ta), 78W (Tc)

Vinnuhitastig : -40°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : MG-WDSON-2, CanPAK M™

Pakki / mál : 3-WDSON

þyngd : -

ástand : Nýtt og frumlegt

Tengt : BSB165 , BSB165N15

skjöl fyrir BSB165N15NZ3GXUMA1

datasheets : BSB165N15NZ3GXUMA1.pdf

Tengdar vörur fyrir BSB165N15NZ3GXUMA1 Infineon Technologies

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