IPD65R660CFDBTMA1 - MOSFET N-CH 650V 6A TO252

Framleiðanda Part Number

IPD65R660CFDBTMA1

Innri Part Number

AX-IPD65R660CFDBTMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 650V 6A TO252

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

669400 Pieces

Tilvísun verð

~~USD 0.419124~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPD65R660CFDBTMA1 á lager að selja.

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forskriftir fyrir IPD65R660CFDBTMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPD65R660CFDBTMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 650V 6A TO252

Series : CoolMOS™

Hluti staða : Not For New Designs

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 650V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 6A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 660 mOhm @ 2.1A, 10V

Vgs (th) (Max) @ kt : 4.5V @ 200µA

Hliðargjald (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 615pF @ 100V

FET lögun : -

Dreifing orku (Max) : 62.5W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO252-3

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPD65 , IPD65R66

skjöl fyrir IPD65R660CFDBTMA1

datasheets : IPD65R660CFDBTMA1.pdf

Tengdar vörur fyrir IPD65R660CFDBTMA1 Infineon Technologies

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